In situ TEM revealing pretreatment and interface effects in Ge2Sb2Te5

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Ruiwen Shao
  • Lihua Wang
  • Weikang Dong
  • Lixin Yao
  • Yongjin Chen
  • Kun Zheng
  • Xiaodong Han

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number222105
Journal / PublicationApplied Physics Letters
Volume116
Issue number22
Publication statusPublished - 1 Jun 2020

Abstract

Random access memory devices that rely on phase changes are primarily limited by the speed of crystallization. However, imaging structural dynamics in working devices with nanoscale resolution remains elusive. Using an ultrafast liquid-quenching system in transmission electron microscope, we obtain a melt-quenched amorphous phase-change material Ge2Sb2Te5 nanosheet. We find that the applied incubation field (pretreatment) leads to nonuniform nucleus formation and growth in the amorphous Ge2Sb2Te5, accompanied by a slight change in electric properties. Moreover, the phase-change mechanism changes from the material inherent crystallization mechanism (nucleation-dominated) to the heterocrystallization mechanism, indicating the incubation period of nucleation might be bypassed.

Research Area(s)

  • PHASE-CHANGE MATERIALS, ELECTRON-MICROSCOPY, CRYSTAL NUCLEATION, CRYSTALLIZATION, MEMORY

Citation Format(s)

In situ TEM revealing pretreatment and interface effects in Ge2Sb2Te5. / Shao, Ruiwen; Wang, Lihua; Dong, Weikang; Yao, Lixin; Chen, Yongjin; Dong, Lixin; Zheng, Kun; Han, Xiaodong.

In: Applied Physics Letters, Vol. 116, No. 22, 222105, 01.06.2020.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal