In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

Y. G. Cao; S. H. Xu; W. Lü; X. Q. Dai; Y. F. Chan; N. Wang; Y. Liu; H. S. Wu; M. H. Xie; S. Y. Tong

doi:10.1103/PhysRevB.71.155322

In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

Y. G. Cao
, S. H. Xu
, W. Lü
, X. Q. Dai
, Y. F. Chan
, N. Wang
, Y. Liu
, H. S. Wu
, M. H. Xie
, S. Y. Tong

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

1 Downloads (CityUHK Scholars)

Abstract

Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.

Original language	English
Article number	155322
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	71
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.71.155322
Publication status	Published - 2005
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

The authors wish to thank C.-H. Lam for his useful comments and the help in strain energy analysis. Technical support from W. K. Ho is also appreciated. The project is financially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project Nos. HKU7048/04P, 7035/03P, and CityU1238/02P). One of the authors (M.H.X.) also acknowledges the support by National High-Tech Research and Development (863) Program of China under Grant No. 2003AA311060.

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: Cao, Y. G., Xu, S. H., Lü, W., Dai, X. Q., Chan, Y. F., Wang, N., Liu, Y., Wu, H. S., Xie, M. H., & Tong, S. Y. (2005). In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy. Physical Review B, 71(15), Article 155322. https://doi.org/10.1103/PhysRevB.71.155322 The copyright of this article is owned by American Physical Society.

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Cao, Y. G., Xu, S. H., Lü, W., Dai, X. Q., Chan, Y. F., Wang, N., Liu, Y., Wu, H. S., Xie, M. H., & Tong, S. Y. (2005). In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy. Physical Review B - Condensed Matter and Materials Physics, 71(15), Article 155322. https://doi.org/10.1103/PhysRevB.71.155322

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abstract = "Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. {\textcopyright} 2005 The American Physical Society.",

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In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy. / Cao, Y. G.; Xu, S. H.; Lü, W. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 15, 155322, 2005.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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T1 - In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

AU - Cao, Y. G.

AU - Xu, S. H.

AU - Lü, W.

AU - Dai, X. Q.

AU - Chan, Y. F.

AU - Wang, N.

AU - Liu, Y.

AU - Wu, H. S.

AU - Xie, M. H.

AU - Tong, S. Y.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2005

Y1 - 2005

N2 - Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.

AB - Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.

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SN - 1098-0121

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JO - Physical Review B - Condensed Matter and Materials Physics

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In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

Abstract

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