In situ resistivity measurement of cobalt silicide formation

G. Ottaviani; K. N. Tu; P. Psaras; C. Nobili

doi:10.1063/1.339486

In situ resistivity measurement of cobalt silicide formation

G. Ottaviani
, K. N. Tu
, P. Psaras
, C. Nobili

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

30 Citations (Scopus)

Abstract

In situ resistivity measurements have been utilized to study the reaction and silicide formation between cobalt and amorphous silicon thin films from room temperature to 800 °C. In conjunction, structure and composition changes were analyzed by x-ray diffraction and Rutherford backscattering spectrometry. Formation of Co₂Si, CoSi, and CoSi₂ were observed. Interfacial reaction to form Co₂Si occurs at approximately 400 °C. In bilayers of excess silicon, CoSi forms at approximately 520 °C and, if free silicon is still present, CoSi₂ forms at about 550 °C. In the case of excess cobalt, Co₂Si forms first and is followed by a cobalt-rich solid solution. Co₃Si silicide was not observed.

Original language	English
Pages (from-to)	2290-2294
Journal	Journal of Applied Physics
Volume	62
Issue number	6
DOIs	https://doi.org/10.1063/1.339486
Publication status	Published - 1987
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "In situ resistivity measurement of cobalt silicide formation",

abstract = "In situ resistivity measurements have been utilized to study the reaction and silicide formation between cobalt and amorphous silicon thin films from room temperature to 800 °C. In conjunction, structure and composition changes were analyzed by x-ray diffraction and Rutherford backscattering spectrometry. Formation of Co2Si, CoSi, and CoSi2 were observed. Interfacial reaction to form Co2Si occurs at approximately 400 °C. In bilayers of excess silicon, CoSi forms at approximately 520 °C and, if free silicon is still present, CoSi2 forms at about 550 °C. In the case of excess cobalt, Co2Si forms first and is followed by a cobalt-rich solid solution. Co3Si silicide was not observed.",

author = "G. Ottaviani and Tu, \{K. N.\} and P. Psaras and C. Nobili",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected]. ",

year = "1987",

doi = "10.1063/1.339486",

language = "English",

volume = "62",

pages = "2290--2294",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - In situ resistivity measurement of cobalt silicide formation

AU - Ottaviani, G.

AU - Tu, K. N.

AU - Psaras, P.

AU - Nobili, C.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1987

Y1 - 1987

N2 - In situ resistivity measurements have been utilized to study the reaction and silicide formation between cobalt and amorphous silicon thin films from room temperature to 800 °C. In conjunction, structure and composition changes were analyzed by x-ray diffraction and Rutherford backscattering spectrometry. Formation of Co2Si, CoSi, and CoSi2 were observed. Interfacial reaction to form Co2Si occurs at approximately 400 °C. In bilayers of excess silicon, CoSi forms at approximately 520 °C and, if free silicon is still present, CoSi2 forms at about 550 °C. In the case of excess cobalt, Co2Si forms first and is followed by a cobalt-rich solid solution. Co3Si silicide was not observed.

AB - In situ resistivity measurements have been utilized to study the reaction and silicide formation between cobalt and amorphous silicon thin films from room temperature to 800 °C. In conjunction, structure and composition changes were analyzed by x-ray diffraction and Rutherford backscattering spectrometry. Formation of Co2Si, CoSi, and CoSi2 were observed. Interfacial reaction to form Co2Si occurs at approximately 400 °C. In bilayers of excess silicon, CoSi forms at approximately 520 °C and, if free silicon is still present, CoSi2 forms at about 550 °C. In the case of excess cobalt, Co2Si forms first and is followed by a cobalt-rich solid solution. Co3Si silicide was not observed.

UR - https://www.scopus.com/pages/publications/0000154889

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0000154889&origin=recordpage

U2 - 10.1063/1.339486

DO - 10.1063/1.339486

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 62

SP - 2290

EP - 2294

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

In situ resistivity measurement of cobalt silicide formation

Abstract

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