In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures

A. V. Vairagar; S. G. Mhaisalkar; Ahila Krishnamoorthy; K. N. Tu; A. M. Gusak; Moritz Andreas Meyer; Ehrenfried Zschech

doi:10.1063/1.1795978

Author(s)

A. V. Vairagar
S. G. Mhaisalkar
Ahila Krishnamoorthy
A. M. Gusak
Moritz Andreas Meyer
Ehrenfried Zschech

Detail(s)

Original language	English
Pages (from-to)	2502-2504
Journal / Publication	Applied Physics Letters
Volume	85
Issue number	13
Publication status	Published - 27 Sep 2004
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.1795978 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-7544241907&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(22d586ba-f205-42ad-b532-da3b2fb2eb04).html

Abstract

Electromigration mechanism in dual-damascene Cu interconnect structures was analyzed by in situ electromigration characterization using scanning electron microscopy. Void formation and migration on the Cu/dielectric interfaces was observed. The different electromigration behaviors of the upper and lower layer dual-damascene structures were also discussed. It was concluded that the findings can led to a better understanding of real electromigration mechanisms in dual-damascene Cu interconnects.

Bibliographic Note

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Citation Format(s)

[ RIS ] [ BibTeX ]

In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures. / Vairagar, A. V.; Mhaisalkar, S. G.; Krishnamoorthy, Ahila et al.

In: Applied Physics Letters, Vol. 85, No. 13, 27.09.2004, p. 2502-2504.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Vairagar, AV, Mhaisalkar, SG, Krishnamoorthy, A, Tu, KN, Gusak, AM, Meyer, MA & Zschech, E 2004, 'In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures', Applied Physics Letters, vol. 85, no. 13, pp. 2502-2504. https://doi.org/10.1063/1.1795978

Vairagar, A. V., Mhaisalkar, S. G., Krishnamoorthy, A., Tu, K. N., Gusak, A. M., Meyer, M. A., & Zschech, E. (2004). In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures. Applied Physics Letters, 85(13), 2502-2504. https://doi.org/10.1063/1.1795978

Vairagar AV, Mhaisalkar SG, Krishnamoorthy A, Tu KN, Gusak AM, Meyer MA et al. In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures. Applied Physics Letters. 2004 Sep 27;85(13):2502-2504. doi: 10.1063/1.1795978

Vairagar, A. V. ; Mhaisalkar, S. G. ; Krishnamoorthy, Ahila et al. / In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures. In: Applied Physics Letters. 2004 ; Vol. 85, No. 13. pp. 2502-2504.