TY - JOUR
T1 - In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures
AU - Vairagar, A. V.
AU - Mhaisalkar, S. G.
AU - Krishnamoorthy, Ahila
AU - Tu, K. N.
AU - Gusak, A. M.
AU - Meyer, Moritz Andreas
AU - Zschech, Ehrenfried
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2004/9/27
Y1 - 2004/9/27
N2 - Electromigration mechanism in dual-damascene Cu interconnect structures was analyzed by in situ electromigration characterization using scanning electron microscopy. Void formation and migration on the Cu/dielectric interfaces was observed. The different electromigration behaviors of the upper and lower layer dual-damascene structures were also discussed. It was concluded that the findings can led to a better understanding of real electromigration mechanisms in dual-damascene Cu interconnects.
AB - Electromigration mechanism in dual-damascene Cu interconnect structures was analyzed by in situ electromigration characterization using scanning electron microscopy. Void formation and migration on the Cu/dielectric interfaces was observed. The different electromigration behaviors of the upper and lower layer dual-damascene structures were also discussed. It was concluded that the findings can led to a better understanding of real electromigration mechanisms in dual-damascene Cu interconnects.
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U2 - 10.1063/1.1795978
DO - 10.1063/1.1795978
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 85
SP - 2502
EP - 2504
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 13
ER -