In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Chundong Wang
  • Yungang Zhou
  • Lifang He
  • Tsz-Wai Ng
  • Guo Hong
  • Qi-Hui Wu
  • Fei Gao

Detail(s)

Original languageEnglish
Pages (from-to)600-605
Journal / PublicationNanoscale
Volume5
Issue number2
Publication statusPublished - 21 Jan 2013

Abstract

Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene's semiconducting properties is considered to be key to its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into the graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties. © The Royal Society of Chemistry.

Citation Format(s)

In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition. / Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun.

In: Nanoscale, Vol. 5, No. 2, 21.01.2013, p. 600-605.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review