In-situ fiberoptic thermometry measurements of wafer temperature during plasma etching using an electron cyclotron resonance source

The increase in wafer temperature due to plasma heating during etching of Si and InP has been studied. Si and InP were etched using a high ion density discharge generated by an electron cyclotron resonance source. The wafer temperature was measured in-situ using fiberoptic thermometry as microwave power, rf power, chamber pressure, and gas flow were varied. Measurement of these parameters enabled the determination of their effects on wafer heating. On one hand, the effect on the water temperature was determined by studying the control temperature of the stage temperature using liquid N₂ and backside He cooling.