Skip to main navigation Skip to search Skip to main content

In situ electrical probing and bias-mediated manipulation of dielectric nanotubes in a high-resolution transmission electron microscope

  • D. Golberg
  • , M. Mitome
  • , K. Kurashima
  • , C. Y. Zhi
  • , C. C. Tang
  • , Y. Bando
  • , O. Lourie

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Boron nitride nanotubes filled with magnesium oxides [MgO, MgO 2] and/or hydroxide [Mg(OH) 2] are electrically probed and delicately manipulated inside a 300 kV JEOL-3000F high-resolution transmission analytical electron microscope equipped with a side-entry "Nanofactory Instruments" piezoholder. At a low bias the nanotubes demonstrate truly insulating behavior. At a high bias of ±30 V they show reversible breakdown current of several dozens of nA. Under 300 kV electron beam irradiation the nanotubes are positively charged that allows us to perform on-demand manipulation with them through tuning of polarity and/or value of a bias voltage on a gold counterelectrode from -140 to +140 V, owing to the prominent electrostatic nanotube-electrode interactions. © 2006 American Institute of Physics.
Original languageEnglish
Article number123101
JournalApplied Physics Letters
Volume88
Issue number12
DOIs
Publication statusPublished - 20 Mar 2006
Externally publishedYes

Fingerprint

Dive into the research topics of 'In situ electrical probing and bias-mediated manipulation of dielectric nanotubes in a high-resolution transmission electron microscope'. Together they form a unique fingerprint.

Cite this