In situ characterization of initial growth of HfO2

L. Wang; Paul K. Chu; K. Xue; J. B. Xu

doi:10.1063/1.3073863

In situ characterization of initial growth of HfO₂

L. Wang
, Paul K. Chu
, K. Xue
, J. B. Xu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

The initial growth of HfO₂ on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO ₂ films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO₂ is not completely formed. A continuous usable HfO₂ film with thickness of about 1.2 nm is presented in this work. © 2009 American Institute of Physics.

Original language	English
Article number	32904
Journal	Applied Physics Letters
Volume	94
Issue number	3
DOIs	https://doi.org/10.1063/1.3073863
Publication status	Published - 2009

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@article{68c332aec1e74007b1eac14233b86e63,

title = "In situ characterization of initial growth of HfO2",

abstract = "The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO 2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work. {\textcopyright} 2009 American Institute of Physics.",

author = "L. Wang and Chu, \{Paul K.\} and K. Xue and Xu, \{J. B.\}",

year = "2009",

doi = "10.1063/1.3073863",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

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TY - JOUR

T1 - In situ characterization of initial growth of HfO2

AU - Wang, L.

AU - Chu, Paul K.

AU - Xue, K.

AU - Xu, J. B.

PY - 2009

Y1 - 2009

N2 - The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO 2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work. © 2009 American Institute of Physics.

AB - The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO 2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work. © 2009 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/58849123344

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-58849123344&origin=recordpage

U2 - 10.1063/1.3073863

DO - 10.1063/1.3073863

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 32904

ER -