TY - JOUR
T1 - In-doped Ga 2O 3 nanobelt based photodetector with high sensitivity and wide-range photoresponse
AU - Tian, Wei
AU - Zhi, Chunyi
AU - Zhai, Tianyou
AU - Chen, Shimou
AU - Wang, Xi
AU - Liao, Meiyong
AU - Golberg, Dmitri
AU - Bando, Yoshio
PY - 2012/9/14
Y1 - 2012/9/14
N2 - Doping is an efficient way to tune the electrical and photoelectrical performances of one-dimensional semiconductors which have potential application as active materials in high performance nanoscale devices. Ga 2O 3 is one the most promising 1D semiconducting systems. However, controlled doping of Ga 2O 3 toward higher photoelectrical performances in Ga 2O 3-based photodetectors remains problematic. Herein high-quality In-doped Ga 2O 3 nanobelts are fabricated through a facile and effective thermal evaporation process. Their morphology and structure are systematically characterized. Indium has successfully been doped into the Ga 2O 3 nanobelts based on the data obtained. The In-doped Ga 2O 3 nanobelt-based photodetector has shown a higher sensitivity (9.99 × 10 4%), responsivity (5.47 × 10 2 A W -1), quantum efficiency (2.72 × 10 5%) and less rise/decay time (1/0.6 s), i.e. much better figures compared with not only the undoped Ga 2O 3 nanobelt/film but also other reported doped photodetectors. In addition, the above photodetector has a wider range photoresponse. In doping has led to significant improvements in the values of key parameters of the Ga 2O 3-based photodetector, beneficial for the fabrication of high-performance photodetectors. © 2012 The Royal Society of Chemistry.
AB - Doping is an efficient way to tune the electrical and photoelectrical performances of one-dimensional semiconductors which have potential application as active materials in high performance nanoscale devices. Ga 2O 3 is one the most promising 1D semiconducting systems. However, controlled doping of Ga 2O 3 toward higher photoelectrical performances in Ga 2O 3-based photodetectors remains problematic. Herein high-quality In-doped Ga 2O 3 nanobelts are fabricated through a facile and effective thermal evaporation process. Their morphology and structure are systematically characterized. Indium has successfully been doped into the Ga 2O 3 nanobelts based on the data obtained. The In-doped Ga 2O 3 nanobelt-based photodetector has shown a higher sensitivity (9.99 × 10 4%), responsivity (5.47 × 10 2 A W -1), quantum efficiency (2.72 × 10 5%) and less rise/decay time (1/0.6 s), i.e. much better figures compared with not only the undoped Ga 2O 3 nanobelt/film but also other reported doped photodetectors. In addition, the above photodetector has a wider range photoresponse. In doping has led to significant improvements in the values of key parameters of the Ga 2O 3-based photodetector, beneficial for the fabrication of high-performance photodetectors. © 2012 The Royal Society of Chemistry.
UR - http://www.scopus.com/inward/record.url?scp=84865007813&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84865007813&origin=recordpage
U2 - 10.1039/c2jm33189f
DO - 10.1039/c2jm33189f
M3 - RGC 21 - Publication in refereed journal
SN - 0959-9428
VL - 22
SP - 17984
EP - 17991
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
IS - 34
ER -