In-doped Ga 2O 3 nanobelt based photodetector with high sensitivity and wide-range photoresponse

Wei Tian, Chunyi Zhi, Tianyou Zhai, Shimou Chen, Xi Wang, Meiyong Liao, Dmitri Golberg, Yoshio Bando

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

101 Citations (Scopus)

Abstract

Doping is an efficient way to tune the electrical and photoelectrical performances of one-dimensional semiconductors which have potential application as active materials in high performance nanoscale devices. Ga 2O 3 is one the most promising 1D semiconducting systems. However, controlled doping of Ga 2O 3 toward higher photoelectrical performances in Ga 2O 3-based photodetectors remains problematic. Herein high-quality In-doped Ga 2O 3 nanobelts are fabricated through a facile and effective thermal evaporation process. Their morphology and structure are systematically characterized. Indium has successfully been doped into the Ga 2O 3 nanobelts based on the data obtained. The In-doped Ga 2O 3 nanobelt-based photodetector has shown a higher sensitivity (9.99 × 10 4%), responsivity (5.47 × 10 2 A W -1), quantum efficiency (2.72 × 10 5%) and less rise/decay time (1/0.6 s), i.e. much better figures compared with not only the undoped Ga 2O 3 nanobelt/film but also other reported doped photodetectors. In addition, the above photodetector has a wider range photoresponse. In doping has led to significant improvements in the values of key parameters of the Ga 2O 3-based photodetector, beneficial for the fabrication of high-performance photodetectors. © 2012 The Royal Society of Chemistry.
Original languageEnglish
Pages (from-to)17984-17991
JournalJournal of Materials Chemistry
Volume22
Issue number34
DOIs
Publication statusPublished - 14 Sept 2012
Externally publishedYes

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