Impurity effects on domain-growth kinetics. II. Potts model

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

34 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)3021-3025
Journal / PublicationPhysical Review B
Volume32
Issue number5
Publication statusPublished - 1 Sep 1985
Externally publishedYes

Abstract

The development of order for the Q-state Potts model for 2 < Q  ≤ 48  n the presence of static, random impurities is studied following a quench from high temperature (TTc)  to very low temperatures. We find that the domain growth becomes pinned for quenches to T=0 and the average pinned domain area Af  varies inversely with the concentration c of impurities. This value of the proportionality factor between A and c-1 can be understood in terms of a simple topological analysis for large Q.

Citation Format(s)

Impurity effects on domain-growth kinetics. II. Potts model. / Srolovitz, David J.; Grest, Gary S.

In: Physical Review B, Vol. 32, No. 5, 01.09.1985, p. 3021-3025.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal