Improving the electrical properties of lanthanum oxide gate dielectric film by using nitrogen and aluminum doping

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publication2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Publication statusPublished - 2011
Externally publishedYes

Conference

Title2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
PlaceChina
CityTianjin
Period17 - 18 November 2011

Abstract

In this work, results and mechanisms for improving the electrical properties of lanthanum gate oxide (La 2O 3) by using nitrogen and aluminum doping are reported. The aluminum doping resulted in the formation of a thin Al 2O 3 layer at the La 2O 3/Si interface. This layer suppressed the out-diffusion of substrate Si and the formation of interfacial silicate layer. For nitrogen doping, oxidation of substrate Si occurred and the metallic La-Si bonds can be converted into La-N bonds at the interface. Nitrogen atoms were also incorporated into the bulk network of lanthanum oxide by filling the oxygen vacancies. These effects resulted in a significant reduction on the bulk and interface trap densities and the gate leakage current. © 2011 IEEE.

Citation Format(s)

Improving the electrical properties of lanthanum oxide gate dielectric film by using nitrogen and aluminum doping. / Wong, H.

2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117579.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review