Improving Hafnium Oxide Reliability by using Plasma Immersion Ion Implantation of Aluminium

B SEN, B L YANG, H WONG, C W KOK, Kimho CHU, An Ping HUANG

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Original language	English
Title of host publication	Proceedings of the 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
Pages	225-226
Publication status	Published - 12 Nov 2007
Event	5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V) - Tokyo, Japan Duration: 12 Nov 2007 → 14 Nov 2007

Conference	5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
Place	Japan
City	Tokyo
Period	12/11/07 → 14/11/07

Research Keywords

@inproceedings{404c1205cecd47feb78505f562a0e174,

title = "Improving Hafnium Oxide Reliability by using Plasma Immersion Ion Implantation of Aluminium",

keywords = "HfO2",

author = "B SEN and YANG, {B L} and H WONG and KOK, {C W} and Kimho CHU and HUANG, {An Ping}",

year = "2007",

month = nov,

day = "12",

language = "English",

pages = "225--226",

booktitle = "Proceedings of the 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)",

note = "5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V) ; Conference date: 12-11-2007 Through 14-11-2007",

}

Improving Hafnium Oxide Reliability by using Plasma Immersion Ion Implantation of Aluminium. / SEN, B; YANG, B L; WONG, H et al.
Proceedings of the 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V). 2007. p. 225-226.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Improving Hafnium Oxide Reliability by using Plasma Immersion Ion Implantation of Aluminium

AU - SEN, B

AU - YANG, B L

AU - WONG, H

AU - KOK, C W

AU - CHU, Kimho

AU - HUANG, An Ping

PY - 2007/11/12

Y1 - 2007/11/12

KW - HfO2

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 225

EP - 226

BT - Proceedings of the 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)

T2 - 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)

Y2 - 12 November 2007 through 14 November 2007

ER -