Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation

A. P. Huang; Z. F. Di; Ricky K.Y. Fu; Paul K. Chu

doi:10.1016/j.surfcoat.2006.09.330

Improvement of interfacial and microstructure properties of high-k ZrO₂ thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation

A. P. Huang
, Z. F. Di
, Ricky K.Y. Fu
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

18 Citations (Scopus)

Abstract

We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO₂ thin films deposited on p-type Si (100) wafers by cathodic arc deposition. The results show that the incorporation of a small amount of N into ZrO₂ can improve the thermal stability of the thin films. High resolution transmission electron microscopy micrographs further confirm that the nitrided film remains amorphous and the interfacial layer has been essentially suppressed. The effects and underlying mechanism are discussed. © 2007 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	8282-8285
Journal	Surface and Coatings Technology
Volume	201
Issue number	19-20 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2006.09.330
Publication status	Published - 5 Aug 2007

Research Keywords

Microstructure
Plasma nitridation
ZrO2

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@article{742212014ea942d280f68cc9660c8b19,

title = "Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation",

abstract = "We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO2 thin films deposited on p-type Si (100) wafers by cathodic arc deposition. The results show that the incorporation of a small amount of N into ZrO2 can improve the thermal stability of the thin films. High resolution transmission electron microscopy micrographs further confirm that the nitrided film remains amorphous and the interfacial layer has been essentially suppressed. The effects and underlying mechanism are discussed. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "Microstructure, Plasma nitridation, ZrO2",

author = "Huang, \{A. P.\} and Di, \{Z. F.\} and Fu, \{Ricky K.Y.\} and Chu, \{Paul K.\}",

year = "2007",

month = aug,

day = "5",

doi = "10.1016/j.surfcoat.2006.09.330",

language = "English",

volume = "201",

pages = "8282--8285",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

number = "19-20 SPEC. ISS.",

}

Improvement of interfacial and microstructure properties of high-k ZrO₂ thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation. / Huang, A. P.; Di, Z. F.; Fu, Ricky K.Y. et al.
In: Surface and Coatings Technology, Vol. 201, No. 19-20 SPEC. ISS., 05.08.2007, p. 8282-8285.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation

AU - Huang, A. P.

AU - Di, Z. F.

AU - Fu, Ricky K.Y.

AU - Chu, Paul K.

PY - 2007/8/5

Y1 - 2007/8/5

N2 - We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO2 thin films deposited on p-type Si (100) wafers by cathodic arc deposition. The results show that the incorporation of a small amount of N into ZrO2 can improve the thermal stability of the thin films. High resolution transmission electron microscopy micrographs further confirm that the nitrided film remains amorphous and the interfacial layer has been essentially suppressed. The effects and underlying mechanism are discussed. © 2007 Elsevier B.V. All rights reserved.

AB - We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO2 thin films deposited on p-type Si (100) wafers by cathodic arc deposition. The results show that the incorporation of a small amount of N into ZrO2 can improve the thermal stability of the thin films. High resolution transmission electron microscopy micrographs further confirm that the nitrided film remains amorphous and the interfacial layer has been essentially suppressed. The effects and underlying mechanism are discussed. © 2007 Elsevier B.V. All rights reserved.

KW - Microstructure

KW - Plasma nitridation

KW - ZrO2

UR - https://www.scopus.com/pages/publications/34447520151

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-34447520151&origin=recordpage

U2 - 10.1016/j.surfcoat.2006.09.330

DO - 10.1016/j.surfcoat.2006.09.330

M3 - RGC 21 - Publication in refereed journal

SN - 0257-8972

VL - 201

SP - 8282

EP - 8285

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 19-20 SPEC. ISS.

ER -