Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Ying-Chieh Chen
  • Bernd Kabius
  • Jon M. Hiller
  • Nyan-Hwa Tai
  • I.-Nan Lin

Detail(s)

Original languageEnglish
Pages (from-to)238-241
Journal / PublicationDiamond and Related Materials
Volume20
Issue number2
Online published13 Dec 2010
Publication statusPublished - Feb 2011
Externally publishedYes

Abstract

The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/μm to 12.5 V/μm and the electron field emission current density increased from 10E-5 mA/cm2 to 1 × 10E-2 mA/cm2. The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp3-bonded carbons into sp2-bonded ones) in UNCD films.

Research Area(s)

  • UNCD, Ion implantation, HRTEM

Citation Format(s)

Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications. / Chen, Ying-Chieh; Zhong, Xiao-Yan; Kabius, Bernd et al.
In: Diamond and Related Materials, Vol. 20, No. 2, 02.2011, p. 238-241.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review