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Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications

Ying-Chieh Chen*, Xiao-Yan Zhong, Bernd Kabius, Jon M. Hiller, Nyan-Hwa Tai, I.-Nan Lin

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/μm to 12.5 V/μm and the electron field emission current density increased from 10E-5 mA/cm2 to 1 × 10E-2 mA/cm2. The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp3-bonded carbons into sp2-bonded ones) in UNCD films.
Original languageEnglish
Pages (from-to)238-241
JournalDiamond and Related Materials
Volume20
Issue number2
Online published13 Dec 2010
DOIs
Publication statusPublished - Feb 2011
Externally publishedYes

Research Keywords

  • UNCD
  • Ion implantation
  • HRTEM

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