TY - JOUR
T1 - Improvement of electromigration lifetime of submicrometer dual-damascene Cu interconnects through surface engineering
AU - Vairagar, A. V.
AU - Gan, Zhenghao
AU - Shao, Wei
AU - Mhaisalkar, S. G.
AU - Li, Hongyu
AU - Tu, K. N.
AU - Chen, Zhong
AU - Zschech, E.
AU - Engelmann, H. J.
AU - Zhang, Sam
PY - 2006/1
Y1 - 2006/1
N2 - The effect of modifying Cu/dielectric cap interface on electromigration (EM) in dual-damascene interconnect structures is presented. The Cu surface was treated with reducing (NH3, H2) and reactive (SiH4) gases immediately after chemical mechanical polishing, but prior to SiNx dielectric cap deposition. Thus, compositions change at the interface capped by different layers including copper suicide and nitride. The Cu/SiNx, interf'acial reactions upon different treatments were detailed by X-ray photoelectron spectroscopy analysis, which correlated to the EM lifetimes very well. NHj treated samples showed similar failure times as control samples with no surface treatment. Significant improvement was observed for hydrogen plasma and silane treatment structures. It is found that, upon different surface treatments, formation of Cu suicide has a higher impact on EM lifetime improvement than formation of Cu nitride. © 2006 The Electrochemical Society. All rights reserved.
AB - The effect of modifying Cu/dielectric cap interface on electromigration (EM) in dual-damascene interconnect structures is presented. The Cu surface was treated with reducing (NH3, H2) and reactive (SiH4) gases immediately after chemical mechanical polishing, but prior to SiNx dielectric cap deposition. Thus, compositions change at the interface capped by different layers including copper suicide and nitride. The Cu/SiNx, interf'acial reactions upon different treatments were detailed by X-ray photoelectron spectroscopy analysis, which correlated to the EM lifetimes very well. NHj treated samples showed similar failure times as control samples with no surface treatment. Significant improvement was observed for hydrogen plasma and silane treatment structures. It is found that, upon different surface treatments, formation of Cu suicide has a higher impact on EM lifetime improvement than formation of Cu nitride. © 2006 The Electrochemical Society. All rights reserved.
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U2 - 10.1149/1.2217267
DO - 10.1149/1.2217267
M3 - RGC 21 - Publication in refereed journal
SN - 0013-4651
VL - 153
SP - G840-G845
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 9
ER -
