Improved predistorter for GaAs FET power amplifier

Wai Keung Lo; Wing Shing Chan; Chung Wai Li

doi:10.1002/mop.11331

Improved predistorter for GaAs FET power amplifier

Wai Keung Lo
, Wing Shing Chan
, Chung Wai Li

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

Linearization of the gate-source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. © 2004 Wiley Periodicals, Inc.

Original language	English
Pages (from-to)	211-213
Journal	Microwave and Optical Technology Letters
Volume	40
Issue number	3
DOIs	https://doi.org/10.1002/mop.11331
Publication status	Published - 5 Feb 2004

Research Keywords

Intermodulation distortion
Linearization
Power amplifier
Spectral regrowth

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title = "Improved predistorter for GaAs FET power amplifier",

abstract = "Linearization of the gate-source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. {\textcopyright} 2004 Wiley Periodicals, Inc.",

keywords = "Intermodulation distortion, Linearization, Power amplifier, Spectral regrowth",

author = "Lo, \{Wai Keung\} and Chan, \{Wing Shing\} and Li, \{Chung Wai\}",

year = "2004",

month = feb,

day = "5",

doi = "10.1002/mop.11331",

language = "English",

volume = "40",

pages = "211--213",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons",

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TY - JOUR

T1 - Improved predistorter for GaAs FET power amplifier

AU - Lo, Wai Keung

AU - Chan, Wing Shing

AU - Li, Chung Wai

PY - 2004/2/5

Y1 - 2004/2/5

N2 - Linearization of the gate-source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. © 2004 Wiley Periodicals, Inc.

AB - Linearization of the gate-source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. © 2004 Wiley Periodicals, Inc.

KW - Intermodulation distortion

KW - Linearization

KW - Power amplifier

KW - Spectral regrowth

UR - https://www.scopus.com/pages/publications/0742307476

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0742307476&origin=recordpage

U2 - 10.1002/mop.11331

DO - 10.1002/mop.11331

M3 - RGC 21 - Publication in refereed journal

SN - 0895-2477

VL - 40

SP - 211

EP - 213

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

Improved predistorter for GaAs FET power amplifier

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Research Keywords

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