Improved predistorter for GaAs FET power amplifier

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

2 Scopus Citations
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Author(s)

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Detail(s)

Original languageEnglish
Pages (from-to)211-213
Journal / PublicationMicrowave and Optical Technology Letters
Volume40
Issue number3
Publication statusPublished - 5 Feb 2004

Abstract

Linearization of the gate-source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. © 2004 Wiley Periodicals, Inc.

Research Area(s)

  • Intermodulation distortion, Linearization, Power amplifier, Spectral regrowth

Citation Format(s)

Improved predistorter for GaAs FET power amplifier. / Lo, Wai Keung; Chan, Wing Shing; Li, Chung Wai.

In: Microwave and Optical Technology Letters, Vol. 40, No. 3, 05.02.2004, p. 211-213.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal