Improved predistorter for GaAs FET power amplifier
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 211-213 |
| Journal / Publication | Microwave and Optical Technology Letters |
| Volume | 40 |
| Issue number | 3 |
| Publication status | Published - 5 Feb 2004 |
Link(s)
Abstract
Linearization of the gate-source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. © 2004 Wiley Periodicals, Inc.
Research Area(s)
- Intermodulation distortion, Linearization, Power amplifier, Spectral regrowth
Citation Format(s)
Improved predistorter for GaAs FET power amplifier. / Lo, Wai Keung; Chan, Wing Shing; Li, Chung Wai.
In: Microwave and Optical Technology Letters, Vol. 40, No. 3, 05.02.2004, p. 211-213.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
