Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

J. Luo; L. H. Li; H. T. Liu; K. M. Yu; Y. Xu; X. J. Zuo; P. Z. Zhu; Y. F. Ma; Ricky K. Y. Fu; Paul K. Chu

doi:10.1063/1.4875982

Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

J. Luo, L. H. Li, H. T. Liu, K. M. Yu, Y. Xu, X. J. Zuo, P. Z. Zhu, Y. F. Ma, Ricky K. Y. Fu, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. © 2014 AIP Publishing LLC.

Original language	English
Article number	63506
Journal	Review of Scientific Instruments
Volume	85
Issue number	6
DOIs	https://doi.org/10.1063/1.4875982
Publication status	Published - Jun 2014

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COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Luo, L. H. Li, H. T. Liu, K. M. Yu, Y. Xu, X. J. Zuo, P. Z. Zhu, Y. F. Ma, Ricky K. Y. Fu, and Paul K. Chu , "Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon", Review of Scientific Instruments 85, 063506 (2014) and may be found at https://doi.org/10.1063/1.4875982.

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title = "Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon",

abstract = "Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. {\textcopyright} 2014 AIP Publishing LLC.",

author = "J. Luo and Li, {L. H.} and Liu, {H. T.} and Yu, {K. M.} and Y. Xu and Zuo, {X. J.} and Zhu, {P. Z.} and Ma, {Y. F.} and Fu, {Ricky K. Y.} and Chu, {Paul K.}",

year = "2014",

month = jun,

doi = "10.1063/1.4875982",

language = "English",

volume = "85",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

AU - Luo, J.

AU - Li, L. H.

AU - Liu, H. T.

AU - Yu, K. M.

AU - Xu, Y.

AU - Zuo, X. J.

AU - Zhu, P. Z.

AU - Ma, Y. F.

AU - Fu, Ricky K. Y.

AU - Chu, Paul K.

PY - 2014/6

Y1 - 2014/6

N2 - Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. © 2014 AIP Publishing LLC.

AB - Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. © 2014 AIP Publishing LLC.

UR - http://www.scopus.com/inward/record.url?scp=84903153217&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84903153217&origin=recordpage

U2 - 10.1063/1.4875982

DO - 10.1063/1.4875982

M3 - RGC 21 - Publication in refereed journal

SN - 0034-6748

VL - 85

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 6

M1 - 63506

ER -

Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

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