Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 63506 |
Journal / Publication | Review of Scientific Instruments |
Volume | 85 |
Issue number | 6 |
Publication status | Published - Jun 2014 |
Link(s)
Abstract
Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. © 2014 AIP Publishing LLC.
Citation Format(s)
Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon. / Luo, J.; Li, L. H.; Liu, H. T.; Yu, K. M.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Fu, Ricky K. Y.; Chu, Paul K.
In: Review of Scientific Instruments, Vol. 85, No. 6, 63506, 06.2014.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review