Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 63506 |
Journal / Publication | Review of Scientific Instruments |
Volume | 85 |
Issue number | 6 |
Publication status | Published - Jun 2014 |
Link(s)
DOI | DOI |
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Attachment(s) | Documents
Publisher's Copyright Statement
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-84903153217&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(b855b23b-104d-46ec-bfa6-3a8fb58464d4).html |
Abstract
Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. © 2014 AIP Publishing LLC.
Research Area(s)
Citation Format(s)
Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon. / Luo, J.; Li, L. H.; Liu, H. T. et al.
In: Review of Scientific Instruments, Vol. 85, No. 6, 63506, 06.2014.
In: Review of Scientific Instruments, Vol. 85, No. 6, 63506, 06.2014.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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