Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • J. Luo
  • L. H. Li
  • H. T. Liu
  • Y. Xu
  • X. J. Zuo
  • P. Z. Zhu
  • Y. F. Ma
  • Ricky K. Y. Fu

Detail(s)

Original languageEnglish
Article number63506
Journal / PublicationReview of Scientific Instruments
Volume85
Issue number6
Publication statusPublished - Jun 2014

Abstract

Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. © 2014 AIP Publishing LLC.

Citation Format(s)

Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon. / Luo, J.; Li, L. H.; Liu, H. T.; Yu, K. M.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Fu, Ricky K. Y.; Chu, Paul K.

In: Review of Scientific Instruments, Vol. 85, No. 6, 63506, 06.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review