Abstract
We report the infrared emissions of Er3+-Tm3+ co-doped amorphous Al2O3 thin films pumped at 791 nm by a Ti:sapphire laser. The as-deposited films were annealed to improve the photoluminescence performance. Three cross relaxation channels among Er3+-Tm3+ and Tm3+-Tm3+ ions incorporated in the films were investigated as annealing temperature increases especially from 800 to 850 °C. In order to understand the Stark effect and cross relaxations, the photoluminescence spectra were deconvoluted by Gaussian fittings. Our results indicate that the luminescence intensity of 1.62 μm in comparison to 1.5 μm can be enhanced by the cross relaxation process [Er3+(4I13/2)+Tm3+(3H6) -> Er3+(4I15/2)+Tm3+1(3F4], and the longer-wavelength side of Er3+ emission can be improved by the CR process [Er3+(4I15/2)+Tm3+(3H4) -> Er3+ (4I13/2)+Tm3+(3F4)] at expense of the Tm3+ 1.47 μm emission which is also maybe quenched by the CR effect between themselves. These results suggest one possible approach to achieve broadband infrared emissions at the wavelength region of 1.45-1.65 μm from the Er3+-Tm3+ co-doped systems.
| Original language | English |
|---|---|
| Pages (from-to) | 10673-10676 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 11 |
| Issue number | 12 |
| Online published | 1 Dec 2011 |
| DOIs | |
| Publication status | Published - Dec 2011 |
| Event | 3rd IEEE International NanoElectronics Conference (INEC)/Symposium on Nanoscience and Nanotechnology in China - , Hong Kong, China Duration: 3 Jan 2010 → 8 Jan 2010 |
Research Keywords
- Er3+-Tm3+: Al2O3 Thin Films
- Infrared Emission
- Cross Relaxation
- Annealing
- OPTICAL AMPLIFICATION
- ALUMINATE GLASS
- TM3+ IONS
- BAND
- PHOTOLUMINESCENCE
- FIBER
- LASER
- NM