Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing

I. Shafiq; Y. C. Chan

doi:10.1109/ICQR2MSE.2011.5976634

Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing

I. Shafiq
, Y. C. Chan^*

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

11 Citations (Scopus)

Abstract

In this study, doped-Sn58Bi solders were prepared by mechanically dispersing Ag nano particles additive in Sn-58Bi solders. The interfacial morphologies of the plain solder and doped Sn-58Bi solders under a direct current (DC) of 2.5 A at 75C temperature with Cu pads and Au/Ni/Cu on daisy chain type ball grid array (BGA) substrates were characterized. Unlike the plain solder, there is no obvious accumulation of Bi-rich IMC or Sn rich IMC extrusions on the anode side or cathode side, respectively. The Cu-Sn IMCs on the Cu substrate and Ni-Sn IMCs on the Au/Ni substrates were formed near the cathode interface after the first-reflow induced current crowding near the junction. Cluster like Ag-Sn IMCs in the solder matrix prevented the migration of atoms under current stressing and improved the electro-migration resistance. In addition, fracture occurs at the IMC interfacial region during shear testing with a ductile fracture mode. In the solder ball region -Sn matrix of Sn-58Bi solder joints with a refined microstructure and inter-metallic compound particles Ag were observed, which resulted in an increase in the shear strength, due to a second phase dispersion strengthening mechanism. © 2011 IEEE.

Original language	English
Title of host publication	The Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering
Editors	Hong-Zhong Huang, Ming J. Zuo, Xisheng Jia, Yu Liu
Publisher	IEEE
Pages	374-379
Number of pages	6
ISBN (Electronic)	978-1-4577-1232-6, 978-1-4577-1231-9
ISBN (Print)	978-1-4577-1229-6
DOIs	https://doi.org/10.1109/ICQR2MSE.2011.5976634
Publication status	Published - 2011
Event	2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, ICQR2MSE 2011 - Xi'an, China Duration: 17 Jun 2011 → 19 Jun 2011

Conference

Conference	2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, ICQR2MSE 2011
Place	China
City	Xi'an
Period	17/06/11 → 19/06/11

Research Keywords

Electro-migration
Flip Chip solder joints
microstructure
Nano doping
Shear strength

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10.1109/ICQR2MSE.2011.5976634

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Shafiq, I., & Chan, Y. C. (2011). Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing. In H.-Z. Huang, M. J. Zuo, X. Jia, & Y. Liu (Eds.), The Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering (pp. 374-379). Article 5976634 IEEE. https://doi.org/10.1109/ICQR2MSE.2011.5976634

@inproceedings{15b418000a724168954957ef8974fcda,

title = "Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing",

abstract = "In this study, doped-Sn58Bi solders were prepared by mechanically dispersing Ag nano particles additive in Sn-58Bi solders. The interfacial morphologies of the plain solder and doped Sn-58Bi solders under a direct current (DC) of 2.5 A at 75C temperature with Cu pads and Au/Ni/Cu on daisy chain type ball grid array (BGA) substrates were characterized. Unlike the plain solder, there is no obvious accumulation of Bi-rich IMC or Sn rich IMC extrusions on the anode side or cathode side, respectively. The Cu-Sn IMCs on the Cu substrate and Ni-Sn IMCs on the Au/Ni substrates were formed near the cathode interface after the first-reflow induced current crowding near the junction. Cluster like Ag-Sn IMCs in the solder matrix prevented the migration of atoms under current stressing and improved the electro-migration resistance. In addition, fracture occurs at the IMC interfacial region during shear testing with a ductile fracture mode. In the solder ball region -Sn matrix of Sn-58Bi solder joints with a refined microstructure and inter-metallic compound particles Ag were observed, which resulted in an increase in the shear strength, due to a second phase dispersion strengthening mechanism. {\textcopyright} 2011 IEEE.",

keywords = "Electro-migration, Flip Chip solder joints, microstructure, Nano doping, Shear strength",

author = "I. Shafiq and Chan, \{Y. C.\}",

year = "2011",

doi = "10.1109/ICQR2MSE.2011.5976634",

language = "English",

isbn = "978-1-4577-1229-6",

pages = "374--379",

editor = "Hong-Zhong Huang and Zuo, \{Ming J.\} and Xisheng Jia and Yu Liu",

booktitle = "The Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering",

publisher = "IEEE",

address = "United States",

note = "2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, ICQR2MSE 2011 ; Conference date: 17-06-2011 Through 19-06-2011",

}

Shafiq, I & Chan, YC 2011, Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing. in H-Z Huang, MJ Zuo, X Jia & Y Liu (eds), The Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering., 5976634, IEEE, pp. 374-379, 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, ICQR2MSE 2011, Xi'an, China, 17/06/11. https://doi.org/10.1109/ICQR2MSE.2011.5976634

Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing. / Shafiq, I.; Chan, Y. C.
The Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering. ed. / Hong-Zhong Huang; Ming J. Zuo; Xisheng Jia; Yu Liu. IEEE, 2011. p. 374-379 5976634.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing

AU - Shafiq, I.

AU - Chan, Y. C.

PY - 2011

Y1 - 2011

N2 - In this study, doped-Sn58Bi solders were prepared by mechanically dispersing Ag nano particles additive in Sn-58Bi solders. The interfacial morphologies of the plain solder and doped Sn-58Bi solders under a direct current (DC) of 2.5 A at 75C temperature with Cu pads and Au/Ni/Cu on daisy chain type ball grid array (BGA) substrates were characterized. Unlike the plain solder, there is no obvious accumulation of Bi-rich IMC or Sn rich IMC extrusions on the anode side or cathode side, respectively. The Cu-Sn IMCs on the Cu substrate and Ni-Sn IMCs on the Au/Ni substrates were formed near the cathode interface after the first-reflow induced current crowding near the junction. Cluster like Ag-Sn IMCs in the solder matrix prevented the migration of atoms under current stressing and improved the electro-migration resistance. In addition, fracture occurs at the IMC interfacial region during shear testing with a ductile fracture mode. In the solder ball region -Sn matrix of Sn-58Bi solder joints with a refined microstructure and inter-metallic compound particles Ag were observed, which resulted in an increase in the shear strength, due to a second phase dispersion strengthening mechanism. © 2011 IEEE.

AB - In this study, doped-Sn58Bi solders were prepared by mechanically dispersing Ag nano particles additive in Sn-58Bi solders. The interfacial morphologies of the plain solder and doped Sn-58Bi solders under a direct current (DC) of 2.5 A at 75C temperature with Cu pads and Au/Ni/Cu on daisy chain type ball grid array (BGA) substrates were characterized. Unlike the plain solder, there is no obvious accumulation of Bi-rich IMC or Sn rich IMC extrusions on the anode side or cathode side, respectively. The Cu-Sn IMCs on the Cu substrate and Ni-Sn IMCs on the Au/Ni substrates were formed near the cathode interface after the first-reflow induced current crowding near the junction. Cluster like Ag-Sn IMCs in the solder matrix prevented the migration of atoms under current stressing and improved the electro-migration resistance. In addition, fracture occurs at the IMC interfacial region during shear testing with a ductile fracture mode. In the solder ball region -Sn matrix of Sn-58Bi solder joints with a refined microstructure and inter-metallic compound particles Ag were observed, which resulted in an increase in the shear strength, due to a second phase dispersion strengthening mechanism. © 2011 IEEE.

KW - Electro-migration

KW - Flip Chip solder joints

KW - microstructure

KW - Nano doping

KW - Shear strength

UR - https://www.scopus.com/pages/publications/80052388954

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-80052388954&origin=recordpage

U2 - 10.1109/ICQR2MSE.2011.5976634

DO - 10.1109/ICQR2MSE.2011.5976634

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-4577-1229-6

SP - 374

EP - 379

BT - The Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering

A2 - Huang, Hong-Zhong

A2 - Zuo, Ming J.

A2 - Jia, Xisheng

A2 - Liu, Yu

PB - IEEE

T2 - 2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, ICQR2MSE 2011

Y2 - 17 June 2011 through 19 June 2011

ER -

Improved electro-migration resistance in nano Ag modified Sn-58Bi solder joints under current stressing

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