TY - JOUR
T1 - Improved efficiency and stability of Pb-Sn binary perovskite solar cells by Cs substitution
AU - Liu, Xiao
AU - Yang, Zhibin
AU - Chueh, Chu-Chen
AU - Rajagopal, Adharsh
AU - Williams, Spencer T.
AU - Sun, Ye
AU - Jen, Alex K.-Y.
PY - 2016
Y1 - 2016
N2 - Partially replacing Pb with Sn in organic-inorganic lead halide perovskites has been proven as a promising approach to reduce environmental toxicity and develop low bandgap (as low as 1.20 eV) perovskite solar cells (PVSCs) beneficial for constructing perovskite-based tandem solar cells. In this work, we demonstrated that partially replacing MA+ or FA+ with Cs+ in a Pb-Sn binary perovskite system can effectively retard the associated crystallization rate to facilitate homogenous film formation, subsequently resulting in enhanced device performance and stability, especially for high Sn-containing compositions. The representative MA0.9Cs0.1Pb0.5Sn0.5I3 PVSC with a low Eg of 1.28 eV not only achieves an improved efficiency up to 10.07% but also possesses much improved thermal and ambient stability as compared to the pristine MAPb0.5Sn0.5I3 PVSC showing poorer efficiency (6.36%) and stability. Similarly, when Cs was introduced into FAPb1−xSnxI3 perovskite, enhanced performance was observed, affirming its general applicability and beneficial role in mediating the crystal growth and film formation of Pb-Sn binary perovskites.
AB - Partially replacing Pb with Sn in organic-inorganic lead halide perovskites has been proven as a promising approach to reduce environmental toxicity and develop low bandgap (as low as 1.20 eV) perovskite solar cells (PVSCs) beneficial for constructing perovskite-based tandem solar cells. In this work, we demonstrated that partially replacing MA+ or FA+ with Cs+ in a Pb-Sn binary perovskite system can effectively retard the associated crystallization rate to facilitate homogenous film formation, subsequently resulting in enhanced device performance and stability, especially for high Sn-containing compositions. The representative MA0.9Cs0.1Pb0.5Sn0.5I3 PVSC with a low Eg of 1.28 eV not only achieves an improved efficiency up to 10.07% but also possesses much improved thermal and ambient stability as compared to the pristine MAPb0.5Sn0.5I3 PVSC showing poorer efficiency (6.36%) and stability. Similarly, when Cs was introduced into FAPb1−xSnxI3 perovskite, enhanced performance was observed, affirming its general applicability and beneficial role in mediating the crystal growth and film formation of Pb-Sn binary perovskites.
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U2 - 10.1039/c6ta07712a
DO - 10.1039/c6ta07712a
M3 - RGC 21 - Publication in refereed journal
SN - 2050-7488
VL - 4
SP - 17939
EP - 17945
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 46
ER -
