Imprint and Si Dry Etching Technologies for THz Antennas at 1 THz

Shu-Yan ZHU; Yuan-Long LI; Geng-Bo WU; Chi-Hou CHAN; Kwai M. LUK; Stella W. PANG

doi:10.1109/CSRSWTC52801.2021.9631648

Imprint and Si Dry Etching Technologies for THz Antennas at 1 THz

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

With the growing demands for higher data transmission rates, antennas with working frequency at or above 1 THz are attracting great interest for future 6G communication systems. To fabricate THz antennas with high gain and low profile, traditional metal milling, printed circuit board, and 3D printing technologies all have limitations due to high surface roughness, low resolution, and large antenna size. To overcome these limitations, imprint and silicon (Si) drying etching technologies are developed. The imprint technology can produce 3D microscale spherical curved cavity structures with high precision and low surface roughness of 2 nm. In addition, the dry etching technology can form Si-based THz antenna with high aspect ratio and anisotropic profile. In this study, we will present THz open resonance antenna, circularly polarized antenna, and metasurface antenna working at 1 THz with high gain and low profile.

Original language	English
Title of host publication	Proceedings of the 2021 Cross Strait Radio Science and Wireless Technology Conference
Publisher	IEEE
Pages	372-373
ISBN (Electronic)	9781665432436
ISBN (Print)	9781665432443
DOIs	https://doi.org/10.1109/CSRSWTC52801.2021.9631648
Publication status	Published - 2021
Event	2021 Cross Strait Radio Science and Wireless Technology Conference - Sentosa Hotel Shenzhen Emerald Branch (Live & Virtual), Shenzhen, China Duration: 11 Oct 2021 → 13 Oct 2021 http://www.ee.cityu.edu.hk/skltmw/csrswtc2021/

Publication series

Name
ISSN (Print)	2378-1297
ISSN (Electronic)	2377-8512

Conference

Conference	2021 Cross Strait Radio Science and Wireless Technology Conference
Abbreviated title	CSRSWTC 2021
Place	China
City	Shenzhen
Period	11/10/21 → 13/10/21
Internet address	http://www.ee.cityu.edu.hk/skltmw/csrswtc2021/

Bibliographical note

(Invited)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Research Keywords

Imprint Technology
Si Microfabrication
THz Antenna
Low Profile
High Gain

RGC Funding Information

RGC-funded

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10.1109/CSRSWTC52801.2021.9631648

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Cite this

@inproceedings{22a1151821ab4d689a2c8459352d6e37,

title = "Imprint and Si Dry Etching Technologies for THz Antennas at 1 THz",

abstract = "With the growing demands for higher data transmission rates, antennas with working frequency at or above 1 THz are attracting great interest for future 6G communication systems. To fabricate THz antennas with high gain and low profile, traditional metal milling, printed circuit board, and 3D printing technologies all have limitations due to high surface roughness, low resolution, and large antenna size. To overcome these limitations, imprint and silicon (Si) drying etching technologies are developed. The imprint technology can produce 3D microscale spherical curved cavity structures with high precision and low surface roughness of 2 nm. In addition, the dry etching technology can form Si-based THz antenna with high aspect ratio and anisotropic profile. In this study, we will present THz open resonance antenna, circularly polarized antenna, and metasurface antenna working at 1 THz with high gain and low profile. ",

keywords = "Imprint Technology, Si Microfabrication, THz Antenna, Low Profile, High Gain",

author = "Shu-Yan ZHU and Yuan-Long LI and Geng-Bo WU and Chi-Hou CHAN and LUK, \{Kwai M.\} and PANG, \{Stella W.\}",

note = "(Invited); 2021 Cross Strait Radio Science and Wireless Technology Conference, CSRSWTC 2021 ; Conference date: 11-10-2021 Through 13-10-2021",

year = "2021",

doi = "10.1109/CSRSWTC52801.2021.9631648",

language = "English",

isbn = "9781665432443",

publisher = "IEEE",

pages = "372--373",

booktitle = "Proceedings of the 2021 Cross Strait Radio Science and Wireless Technology Conference",

address = "United States",

url = "http://www.ee.cityu.edu.hk/skltmw/csrswtc2021/",

}

ZHU, S-Y , LI, Y-L, WU, G-B, CHAN, C-H , LUK, KM & PANG, SW 2021, Imprint and Si Dry Etching Technologies for THz Antennas at 1 THz. in Proceedings of the 2021 Cross Strait Radio Science and Wireless Technology Conference. IEEE, pp. 372-373, 2021 Cross Strait Radio Science and Wireless Technology Conference, Shenzhen, China, 11/10/21. https://doi.org/10.1109/CSRSWTC52801.2021.9631648

Imprint and Si Dry Etching Technologies for THz Antennas at 1 THz. / ZHU, Shu-Yan ; LI, Yuan-Long; WU, Geng-Bo et al.
Proceedings of the 2021 Cross Strait Radio Science and Wireless Technology Conference. IEEE, 2021. p. 372-373.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Imprint and Si Dry Etching Technologies for THz Antennas at 1 THz

AU - ZHU, Shu-Yan

AU - LI, Yuan-Long

AU - WU, Geng-Bo

AU - CHAN, Chi-Hou

AU - LUK, Kwai M.

AU - PANG, Stella W.

N1 - (Invited)

PY - 2021

Y1 - 2021

N2 - With the growing demands for higher data transmission rates, antennas with working frequency at or above 1 THz are attracting great interest for future 6G communication systems. To fabricate THz antennas with high gain and low profile, traditional metal milling, printed circuit board, and 3D printing technologies all have limitations due to high surface roughness, low resolution, and large antenna size. To overcome these limitations, imprint and silicon (Si) drying etching technologies are developed. The imprint technology can produce 3D microscale spherical curved cavity structures with high precision and low surface roughness of 2 nm. In addition, the dry etching technology can form Si-based THz antenna with high aspect ratio and anisotropic profile. In this study, we will present THz open resonance antenna, circularly polarized antenna, and metasurface antenna working at 1 THz with high gain and low profile.

AB - With the growing demands for higher data transmission rates, antennas with working frequency at or above 1 THz are attracting great interest for future 6G communication systems. To fabricate THz antennas with high gain and low profile, traditional metal milling, printed circuit board, and 3D printing technologies all have limitations due to high surface roughness, low resolution, and large antenna size. To overcome these limitations, imprint and silicon (Si) drying etching technologies are developed. The imprint technology can produce 3D microscale spherical curved cavity structures with high precision and low surface roughness of 2 nm. In addition, the dry etching technology can form Si-based THz antenna with high aspect ratio and anisotropic profile. In this study, we will present THz open resonance antenna, circularly polarized antenna, and metasurface antenna working at 1 THz with high gain and low profile.

KW - Imprint Technology

KW - Si Microfabrication

KW - THz Antenna

KW - Low Profile

KW - High Gain

UR - https://www.scopus.com/pages/publications/85123773651

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85123773651&origin=recordpage

U2 - 10.1109/CSRSWTC52801.2021.9631648

DO - 10.1109/CSRSWTC52801.2021.9631648

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781665432443

SP - 372

EP - 373

BT - Proceedings of the 2021 Cross Strait Radio Science and Wireless Technology Conference

PB - IEEE

T2 - 2021 Cross Strait Radio Science and Wireless Technology Conference

Y2 - 11 October 2021 through 13 October 2021

ER -

Imprint and Si Dry Etching Technologies for THz Antennas at 1 THz

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Research Keywords

RGC Funding Information

Access Output

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