TY - JOUR
T1 - Implantation of carbon in GaAs and compensating native defects
AU - Moll, Amy J.
AU - Ager III, Joel W.
AU - Kin, Man Yu
AU - Walukiewicz, Wladek
AU - Haller, Eugene E.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1994
Y1 - 1994
N2 - The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the C
As
acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.
AB - The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the C
As
acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.
UR - http://www.scopus.com/inward/record.url?scp=0028582303&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0028582303&origin=recordpage
U2 - 10.4028/www.scientific.net/msf.143-147.1535
DO - 10.4028/www.scientific.net/msf.143-147.1535
M3 - RGC 21 - Publication in refereed journal
SN - 0255-5476
VL - 143-4
SP - 1535
EP - 1540
JO - Materials Science Forum
JF - Materials Science Forum
IS - pt 3
T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)
Y2 - 18 July 1993 through 23 July 1993
ER -