Abstract
The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the C
As
acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.
| Original language | English |
|---|---|
| Pages (from-to) | 1535-1540 |
| Journal | Materials Science Forum |
| Volume | 143-4 |
| Issue number | pt 3 |
| DOIs | |
| Publication status | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: 18 Jul 1993 → 23 Jul 1993 |
Bibliographical note
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