Implantation-assisted synthesis of gallium oxide nanoribbons on gallium arsenide using carbon and nitrogen

We have synthesized gallium oxide (Ga₂O₃) nanoribbons and nanowires on gallium arsenide (GaAs) substrate by using plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Semi-insulating GaAs was treated with PIII of nitrogen, oxygen, acetylene (C₂H₂) or argon ions. For samples implanted with N₂, and C₂H₂ ions, subsequent RTA at 950 °C within 2 min produced Ga₂O₃ nanoribbons on the substrate surface. Our results suggest that each implanted species plays a different role in assisting the growth of these nanomaterials. Carbon is a key element for reduction and oxidation of Ga₂O₃, which can increase the growth rate of Ga₂O₃ nanoribbons. On the other hand, implanted nitrogen forms intermediate gallium nitride nanograins, which may in turn lead to the formation of nanograins of Ga₂O₃ upon reacting with ambient oxygen. These Ga₂O₃ nanograins then act as a growth template for nanowires or nanoribbons. © 2006 Elsevier B.V. All rights reserved.