Implant damage and diffusion behavior of indium in silicon-on-insulator

P. Chen; Z. H. An; R. K. Y. Fu; W. L. Liu; M. Zhu; C. L. Lin; P. K. Chu

doi:10.1109/IWJT.2004.1306760

Implant damage and diffusion behavior of indium in silicon-on-insulator

P. Chen
, Z. H. An
, R. K. Y. Fu
, W. L. Liu
, M. Zhu
, C. L. Lin
, P. K. Chu^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After relatively high-dose implantation (1×10¹⁴ cm^-2 at 200 kV), a completely amorphized layer is formed which can be almost entirely repaired by subsequent annealing. At low energy and low dose implantation, the indium diffusion profiles are similar with those in bulk silicon substrates. However, under the highest-dose implantation condition (1×10¹⁴ cm ^-2), the buried interface of SOI, which acts as an recombination center of point defects, can notably affect the indium diffusion profile by trapping indium atoms at the point defects to the interface and thus leaving a steep profile of indium in the top silicon layer. © 2004 IEEE

Original language	English
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology
Subtitle of host publication	IWJT-2004
Editors	Xin-Ping QU, Guo-Ping Ru, Bing-Zong Li
Publisher	IEEE
Pages	65-68
ISBN (Print)	07309039157
DOIs	https://doi.org/10.1109/IWJT.2004.1306760
Publication status	Published - 2004
Event	4th International Workshop on Junction Technology (IWJT 2004) - Shanghai, China Duration: 15 Mar 2004 → 16 Mar 2004

Conference

Conference	4th International Workshop on Junction Technology (IWJT 2004)
Place	China
City	Shanghai
Period	15/03/04 → 16/03/04

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@inproceedings{ca2c3239a78d40aa807e58f2ebac3659,

title = "Implant damage and diffusion behavior of indium in silicon-on-insulator",

abstract = "Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After relatively high-dose implantation (1×1014 cm-2 at 200 kV), a completely amorphized layer is formed which can be almost entirely repaired by subsequent annealing. At low energy and low dose implantation, the indium diffusion profiles are similar with those in bulk silicon substrates. However, under the highest-dose implantation condition (1×1014 cm -2), the buried interface of SOI, which acts as an recombination center of point defects, can notably affect the indium diffusion profile by trapping indium atoms at the point defects to the interface and thus leaving a steep profile of indium in the top silicon layer. {\textcopyright} 2004 IEEE",

author = "P. Chen and An, \{Z. H.\} and Fu, \{R. K. Y.\} and Liu, \{W. L.\} and M. Zhu and Lin, \{C. L.\} and Chu, \{P. K.\}",

year = "2004",

doi = "10.1109/IWJT.2004.1306760",

language = "English",

isbn = "07309039157",

pages = "65--68",

editor = "QU, \{Xin-Ping \} and Ru, \{Guo-Ping \} and Li, \{Bing-Zong \}",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology",

publisher = "IEEE",

address = "United States",

note = "4th International Workshop on Junction Technology (IWJT 2004) ; Conference date: 15-03-2004 Through 16-03-2004",

}

Chen, P, An, ZH, Fu, RKY, Liu, WL, Zhu, M, Lin, CL & Chu, PK 2004, Implant damage and diffusion behavior of indium in silicon-on-insulator. in X-P QU, G-P Ru & B-Z Li (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology: IWJT-2004. IEEE, pp. 65-68, 4th International Workshop on Junction Technology (IWJT 2004), Shanghai, China, 15/03/04. https://doi.org/10.1109/IWJT.2004.1306760

Implant damage and diffusion behavior of indium in silicon-on-insulator. / Chen, P.; An, Z. H.; Fu, R. K. Y. et al.
Extended Abstracts of the Fourth International Workshop on Junction Technology: IWJT-2004. ed. / Xin-Ping QU; Guo-Ping Ru; Bing-Zong Li. IEEE, 2004. p. 65-68.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Implant damage and diffusion behavior of indium in silicon-on-insulator

AU - Chen, P.

AU - An, Z. H.

AU - Fu, R. K. Y.

AU - Liu, W. L.

AU - Zhu, M.

AU - Lin, C. L.

AU - Chu, P. K.

PY - 2004

Y1 - 2004

N2 - Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After relatively high-dose implantation (1×1014 cm-2 at 200 kV), a completely amorphized layer is formed which can be almost entirely repaired by subsequent annealing. At low energy and low dose implantation, the indium diffusion profiles are similar with those in bulk silicon substrates. However, under the highest-dose implantation condition (1×1014 cm -2), the buried interface of SOI, which acts as an recombination center of point defects, can notably affect the indium diffusion profile by trapping indium atoms at the point defects to the interface and thus leaving a steep profile of indium in the top silicon layer. © 2004 IEEE

AB - Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After relatively high-dose implantation (1×1014 cm-2 at 200 kV), a completely amorphized layer is formed which can be almost entirely repaired by subsequent annealing. At low energy and low dose implantation, the indium diffusion profiles are similar with those in bulk silicon substrates. However, under the highest-dose implantation condition (1×1014 cm -2), the buried interface of SOI, which acts as an recombination center of point defects, can notably affect the indium diffusion profile by trapping indium atoms at the point defects to the interface and thus leaving a steep profile of indium in the top silicon layer. © 2004 IEEE

UR - https://www.scopus.com/pages/publications/3543130662

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-3543130662&origin=recordpage

U2 - 10.1109/IWJT.2004.1306760

DO - 10.1109/IWJT.2004.1306760

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 07309039157

SP - 65

EP - 68

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology

A2 - QU, Xin-Ping

A2 - Ru, Guo-Ping

A2 - Li, Bing-Zong

PB - IEEE

T2 - 4th International Workshop on Junction Technology (IWJT 2004)

Y2 - 15 March 2004 through 16 March 2004

ER -

Implant damage and diffusion behavior of indium in silicon-on-insulator

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