Impact of Nitrogen Incorporation of High Concentration Ozone Oxidation Prepared Ultra-thin HfO2

HfO2 and Hf silicates are emerging as promising oxides to potentially replace SiO2 as the gate dielectric material for future complementary metal–oxide–semiconductor (CMOS) technology. The main challenges for synthesis of HfO2 are the interfacial properties and thermal stability. In this report, we present a method to achieve highly thermal stable ultra-thin HfO2 by combination of high concentration ozone oxidation and nitrogen incorporation. The HfO2 samples were acquired by ozone oxidation of high-vacuum electron-beam evaporated Hf metal film and afterward nitrogen incorporation by plasma immersion ion-implantation. Compositional and structural studies show the improved thermal stability. Also electrical study further confirms the superior properties of the samples.