Immersion nickel deposition on blank silicon in aqueous solution containing ammonium fluoride

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)4696-4701
Journal / PublicationThin Solid Films
Volume515
Issue number11
Publication statusPublished - 9 Apr 2007
Externally publishedYes

Abstract

Immersion deposition of Ni on p-Si (100) blank substrates was carried out in an aqueous NiSO4 solution at a pH value of 8 through displacement reactions. Study of the early deposition stage revealed that incorporation of 2.5 M NH4F in solution promoted Ni nucleation significantly. By adding fluoride, it was observed that metallic Ni was deposited constantly at the expense of Si and the deposition was not self-limited. Sponge-like Ni deposits were observed and it might explain the non-limiting feature of such immersion Ni deposition over Si. Transmission electron microscopic images of Ni/Si cross-sections showed that during the reactions, Si oxide played a role of the intermediate phase. The whole process could have involved successive Si oxidation steps. Eventually the oxide was etched away by fluoride resulting in a nanoporous Ni film. © 2006 Elsevier B.V. All rights reserved.

Research Area(s)

  • Ammonium fluoride, Chemical deposition, Nickel, Transmission electron microscopy

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