Imaging the near-field intensity gradients of a low power semiconductor laser

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)751-755
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume3896
Publication statusPublished - 1999
Externally publishedYes

Conference

TitleProceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices
CitySingapore, Singapore
Period30 November - 3 December 1999

Abstract

A newly developed inverted tapping-mode tuning-fork near-field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.

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