Imaging the near-field intensity gradients of a low power semiconductor laser

Nien Hua Lu, Din Ping Tsai, Wei Yi Lin, H. J. Huang

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

A newly developed inverted tapping-mode tuning-fork near-field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.
Original languageEnglish
Title of host publicationDesign, Fabrication, and Characterization of Photonic Devices
EditorsMarek Osinski, Soo-Jin Chua, Shigefusa F. Chichibu
Pages751-755
DOIs
Publication statusPublished - Nov 1999
Externally publishedYes
EventInternational Symposium on Photonics and Applications - , Singapore
Duration: 29 Nov 19993 Dec 1999

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE - International Society for Optical Engineering
Volume3896
ISSN (Print)0277-786X

Conference

ConferenceInternational Symposium on Photonics and Applications
PlaceSingapore
Period29/11/993/12/99

Fingerprint

Dive into the research topics of 'Imaging the near-field intensity gradients of a low power semiconductor laser'. Together they form a unique fingerprint.

Cite this