Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

Chun Wei Lee; Xiaochen Dong; Seok Hong Goh; Junling Wang; Jun Wei; Lain-Jong Li

doi:10.1021/jp811006r

Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

Chun Wei Lee
, Xiaochen Dong
, Seok Hong Goh
, Junling Wang
, Jun Wei
, Lain-Jong Li^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO ₂ on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO ₂ interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO ₂surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO ₂ dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO ₂ interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO ₂ surfaces. © 2009 American Chemical Society.

Original language	English
Pages (from-to)	4745-4747
Journal	The Journal of Physical Chemistry C
Volume	113
Issue number	12
DOIs	https://doi.org/10.1021/jp811006r
Publication status	Published - 26 Mar 2009
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{2830566b6aa5493da46515466ce82bb1,

title = "Illumination-enhanced hysteresis of transistors based on carbon nanotube networks",

abstract = "The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea{\~ } 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces. {\textcopyright} 2009 American Chemical Society.",

author = "Lee, \{Chun Wei\} and Xiaochen Dong and Goh, \{Seok Hong\} and Junling Wang and Jun Wei and Lain-Jong Li",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2009",

month = mar,

day = "26",

doi = "10.1021/jp811006r",

language = "English",

volume = "113",

pages = "4745--4747",

journal = "The Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

AU - Lee, Chun Wei

AU - Dong, Xiaochen

AU - Goh, Seok Hong

AU - Wang, Junling

AU - Wei, Jun

AU - Li, Lain-Jong

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2009/3/26

Y1 - 2009/3/26

N2 - The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces. © 2009 American Chemical Society.

AB - The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces. © 2009 American Chemical Society.

UR - https://www.scopus.com/pages/publications/65249188723

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-65249188723&origin=recordpage

U2 - 10.1021/jp811006r

DO - 10.1021/jp811006r

M3 - RGC 21 - Publication in refereed journal

SN - 1932-7447

VL - 113

SP - 4745

EP - 4747

JO - The Journal of Physical Chemistry C

JF - The Journal of Physical Chemistry C

IS - 12

ER -

Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

Abstract

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