@inproceedings{92acb666db624f2790239278aee5ebce,
title = "In situ characterization of Ge nanocrystals near the growth temperature",
abstract = "We present in situ electron diffraction data indicating that Ge nanocrystals embedded in a silica matrix can be solid at temperatures exceeding the bulk Ge melting point. Supercooling is observed when returning from temperatures above the melting point of the Ge nanocrystals. Since melting point hysteresis is observed, it is not clear if nanoclusters are solid or liquid during the initial growth process. Raman spectra of as-grown nanocrystals give a measure of compressive stress and in-situ Raman spectroscopy further confirms the presence of crystalline Ge above 800 °C. {\textcopyright} 2005 American Institute of Physics.",
author = "Sharp, {I. D.} and Q. Xu and Yi, {D. O.} and Liao, {C. Y.} and Beeman, {J. W.} and Z. Liliental-Weber and Yu, {K. M.} and Zakharov, {D. N.} and {Ager III}, {J. W.} and Chrzan, {D. C.} and Haller, {E. E.}",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994255",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics",
pages = "611--612",
editor = "Jos{\'e} Men{\'e}ndez and {Van de Walle}, {Chris G.}",
booktitle = "PHYSICS OF SEMICONDUCTORS",
address = "United States",
note = "27th International Conference on the Physics of Semiconductors (ICPS 27) ; Conference date: 26-07-2004 Through 30-07-2004",
}