Identification of Vacancy-Like Defects in High-Rate Grown a-Si Before and After Light Soaking by VEPAS

X. Zou, Y. C. Chan, D. P. Webb, Y. W. Lam, S. H. Lin, F. Y. M. Chan, Y. F. Hu, X. Weng, C. D. Beling, S. Fung

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

We show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.
Original languageEnglish
Title of host publicationAmorphous & Microcrystalline Silicon Technology 1998
Pages637-642
DOIs
Publication statusPublished - Apr 1998
Event1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: 14 Apr 199817 Apr 1998

Publication series

NameMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
ISSN (Print)0272-9172

Conference

Conference1998 MRS Spring Meeting
CitySan Francisco, CA, USA
Period14/04/9817/04/98

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