Identification of the dominant diffusing species in silicide formation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • W. K. Chu
  • H. Kraütle
  • J. W. Mayer
  • H. Müller
  • M. A. Nicolet

Detail(s)

Original languageEnglish
Pages (from-to)454-457
Journal / PublicationApplied Physics Letters
Volume25
Issue number8
Publication statusPublished - 1974
Externally publishedYes

Abstract

Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2 and TiSi2, Ni atoms are the faster moving species in Ni2Si. © 1974 American Institute of Physics.

Bibliographic Note

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Citation Format(s)

Identification of the dominant diffusing species in silicide formation. / Chu, W. K.; Kraütle, H.; Mayer, J. W.; Müller, H.; Nicolet, M. A.; Tu, K. N.

In: Applied Physics Letters, Vol. 25, No. 8, 1974, p. 454-457.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review