TY - JOUR
T1 - Identification of the dominant diffusing species in silicide formation
AU - Chu, W. K.
AU - Kraütle, H.
AU - Mayer, J. W.
AU - Müller, H.
AU - Nicolet, M. A.
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1974
Y1 - 1974
N2 - Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2 and TiSi2, Ni atoms are the faster moving species in Ni2Si. © 1974 American Institute of Physics.
AB - Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2 and TiSi2, Ni atoms are the faster moving species in Ni2Si. © 1974 American Institute of Physics.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-11744381998&origin=recordpage
U2 - 10.1063/1.1655546
DO - 10.1063/1.1655546
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 25
SP - 454
EP - 457
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
ER -