Identification of diffusion species in V-SiO2 reactions

W. K. Chu; K. N. Tu

doi:10.1063/1.90154

Identification of diffusion species in V-SiO₂ reactions

W. K. Chu
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

9 Citations (Scopus)

Abstract

Interfacial reactions between vanadium and thermally grown SiO₂ films have been studied with Xe ions implanted in the SiO₂ as diffusion markers. After the sample is heated at temperatures from 700 to 900°C, the SiO₂ decomposes and V₃Si forms. A backscattering analysis of the marker displacement discloses that vanadium is the dominant moving species which diffuses through the V₃Si to react with the SiO₂, whereas the oxygen atoms generated as a result of the reaction outdiffuse and oxidize the outer vanadium layer. For a clear presentation of the reaction and marker motion, the usual energy spectra of backscattering have been converted to in-depth compositional profiles.

Original language	English
Pages (from-to)	83-85
Journal	Applied Physics Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1063/1.90154
Publication status	Published - 1978
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Access Output

10.1063/1.90154

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{310edf0ef7844b3b8a4d3a63e4203226,

title = "Identification of diffusion species in V-SiO2 reactions",

abstract = "Interfacial reactions between vanadium and thermally grown SiO2 films have been studied with Xe ions implanted in the SiO2 as diffusion markers. After the sample is heated at temperatures from 700 to 900°C, the SiO2 decomposes and V3Si forms. A backscattering analysis of the marker displacement discloses that vanadium is the dominant moving species which diffuses through the V3Si to react with the SiO2, whereas the oxygen atoms generated as a result of the reaction outdiffuse and oxidize the outer vanadium layer. For a clear presentation of the reaction and marker motion, the usual energy spectra of backscattering have been converted to in-depth compositional profiles.",

author = "Chu, \{W. K.\} and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected]. ",

year = "1978",

doi = "10.1063/1.90154",

language = "English",

volume = "33",

pages = "83--85",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Identification of diffusion species in V-SiO2 reactions

AU - Chu, W. K.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1978

Y1 - 1978

N2 - Interfacial reactions between vanadium and thermally grown SiO2 films have been studied with Xe ions implanted in the SiO2 as diffusion markers. After the sample is heated at temperatures from 700 to 900°C, the SiO2 decomposes and V3Si forms. A backscattering analysis of the marker displacement discloses that vanadium is the dominant moving species which diffuses through the V3Si to react with the SiO2, whereas the oxygen atoms generated as a result of the reaction outdiffuse and oxidize the outer vanadium layer. For a clear presentation of the reaction and marker motion, the usual energy spectra of backscattering have been converted to in-depth compositional profiles.

AB - Interfacial reactions between vanadium and thermally grown SiO2 films have been studied with Xe ions implanted in the SiO2 as diffusion markers. After the sample is heated at temperatures from 700 to 900°C, the SiO2 decomposes and V3Si forms. A backscattering analysis of the marker displacement discloses that vanadium is the dominant moving species which diffuses through the V3Si to react with the SiO2, whereas the oxygen atoms generated as a result of the reaction outdiffuse and oxidize the outer vanadium layer. For a clear presentation of the reaction and marker motion, the usual energy spectra of backscattering have been converted to in-depth compositional profiles.

UR - https://www.scopus.com/pages/publications/0009062795

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0009062795&origin=recordpage

U2 - 10.1063/1.90154

DO - 10.1063/1.90154

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 33

SP - 83

EP - 85

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -