I-2 Shallow Silicide Contact for Shallow Junction Devices
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Journal / Publication | IEEE Transactions on Electron Devices |
| Volume | 28 |
| Issue number | 10 |
| Publication status | Published - Oct 1981 |
| Externally published | Yes |
Link(s)
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
Citation Format(s)
I-2 Shallow Silicide Contact for Shallow Junction Devices. / Tu, K. N.
In: IEEE Transactions on Electron Devices, Vol. 28, No. 10, 10.1981.
In: IEEE Transactions on Electron Devices, Vol. 28, No. 10, 10.1981.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
