I-2 Shallow Silicide Contact for Shallow Junction Devices

K. N. Tu

doi:10.1109/T-ED.1981.20516

I-2 Shallow Silicide Contact for Shallow Junction Devices

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Original language	English
Journal	IEEE Transactions on Electron Devices
Volume	28
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1981.20516
Publication status	Published - Oct 1981
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "I-2 Shallow Silicide Contact for Shallow Junction Devices",

author = "Tu, {K. N.}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected]. ",

year = "1981",

month = oct,

doi = "10.1109/T-ED.1981.20516",

language = "English",

volume = "28",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - I-2 Shallow Silicide Contact for Shallow Junction Devices

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1981/10

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U2 - 10.1109/T-ED.1981.20516

DO - 10.1109/T-ED.1981.20516

M3 - RGC 21 - Publication in refereed journal

SN - 0018-9383

VL - 28

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

I-2 Shallow Silicide Contact for Shallow Junction Devices

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