Hydrogen-induced surface blistering of sample chuck materials in hydrogen plasma immersion ion implantation

Hydrogen induced surface blistering in single crystal silicon, polysilicon and silicon dioxide was investigated to determine the effects of oxide thickness on the surface potential under bias different voltages. To synthesize silicon-on-insulator wafers, hydrogen plasma immersion ion implantation (PIII) was used. A material compatible to silicon processing was used to construct the sample chuck to reduce metallic contamination sputtered from the exposed sample stage. It was found that the silicon dioxide possesses the best blistering resistance. The calculation suggested in case of thin coating, the surface potential on the oxide coating was not altered at low bias voltage.