HRTEM study of atomic faceting interfaces of Σ=3 NiSi2/Si on (011)Si substrate

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)135-142
Journal / PublicationMaterials Science Forum
Volume189-190
Early online dateJul 1995
Publication statusPublished - 1995
Externally publishedYes

Conference

Title2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance
PlaceAustralia
CityBallarat
Period1 - 5 November 1993

Abstract

The NiSi2 thin film grown on the (11̄0) Si substrate was examined and the Σ=3 NiSi2(1̄11̄)/(1̄11) and NiSi2(11̄5)/(1̄11) Si microfacets were found. The chain unit model was examined in the NiSi2(11̄5)/(1̄11) Si interface and compared with the NiSi2(1̄11)/(11̄5) Si interface in the previous case. Two different domain related atomic faceting structures of the NiSi2(11̄5)/(1̄11) Si interface were found. Finally, the indications of these results were discussed.