HRTEM study of atomic faceting interfaces of Σ=3 NiSi2/Si on (011)Si substrate

W. J. Chen; F. R. Chen

doi:10.4028/www.scientific.net/msf.189-190.135

HRTEM study of atomic faceting interfaces of Σ=3 NiSi₂/Si on (011)Si substrate

W. J. Chen, F. R. Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1 Citation (Scopus)

Abstract

The NiSi₂ thin film grown on the (11̄0) Si substrate was examined and the Σ=3 NiSi₂(1̄11̄)/(1̄11) and NiSi₂(11̄5)/(1̄11) Si microfacets were found. The chain unit model was examined in the NiSi₂(11̄5)/(1̄11) Si interface and compared with the NiSi₂(1̄11)/(11̄5) Si interface in the previous case. Two different domain related atomic faceting structures of the NiSi₂(11̄5)/(1̄11) Si interface were found. Finally, the indications of these results were discussed.

Original language	English
Pages (from-to)	135-142
Journal	Materials Science Forum
Volume	189-190
Online published	Jul 1995
DOIs	https://doi.org/10.4028/www.scientific.net/msf.189-190.135
Publication status	Published - 1995
Externally published	Yes
Event	2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance - Ballarat, Australia Duration: 1 Nov 1993 → 5 Nov 1993

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@article{f3a72b9274884fb19b2febbf33301eea,

title = "HRTEM study of atomic faceting interfaces of Σ=3 NiSi2/Si on (011)Si substrate",

abstract = "The NiSi2 thin film grown on the (1{\=1}0) Si substrate was examined and the Σ=3 NiSi2({\=1}1{\=1})/({\=1}11) and NiSi2(1{\=1}5)/({\=1}11) Si microfacets were found. The chain unit model was examined in the NiSi2(1{\=1}5)/({\=1}11) Si interface and compared with the NiSi2({\=1}11)/(1{\=1}5) Si interface in the previous case. Two different domain related atomic faceting structures of the NiSi2(1{\=1}5)/({\=1}11) Si interface were found. Finally, the indications of these results were discussed.",

author = "Chen, {W. J.} and Chen, {F. R.}",

year = "1995",

doi = "10.4028/www.scientific.net/msf.189-190.135",

language = "English",

volume = "189-190",

pages = "135--142",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd.",

note = "2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance ; Conference date: 01-11-1993 Through 05-11-1993",

}

TY - JOUR

T1 - HRTEM study of atomic faceting interfaces of Σ=3 NiSi2/Si on (011)Si substrate

AU - Chen, W. J.

AU - Chen, F. R.

PY - 1995

Y1 - 1995

N2 - The NiSi2 thin film grown on the (11̄0) Si substrate was examined and the Σ=3 NiSi2(1̄11̄)/(1̄11) and NiSi2(11̄5)/(1̄11) Si microfacets were found. The chain unit model was examined in the NiSi2(11̄5)/(1̄11) Si interface and compared with the NiSi2(1̄11)/(11̄5) Si interface in the previous case. Two different domain related atomic faceting structures of the NiSi2(11̄5)/(1̄11) Si interface were found. Finally, the indications of these results were discussed.

AB - The NiSi2 thin film grown on the (11̄0) Si substrate was examined and the Σ=3 NiSi2(1̄11̄)/(1̄11) and NiSi2(11̄5)/(1̄11) Si microfacets were found. The chain unit model was examined in the NiSi2(11̄5)/(1̄11) Si interface and compared with the NiSi2(1̄11)/(11̄5) Si interface in the previous case. Two different domain related atomic faceting structures of the NiSi2(11̄5)/(1̄11) Si interface were found. Finally, the indications of these results were discussed.

UR - http://www.scopus.com/inward/record.url?scp=0029178663&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0029178663&origin=recordpage

U2 - 10.4028/www.scientific.net/msf.189-190.135

DO - 10.4028/www.scientific.net/msf.189-190.135

M3 - RGC 21 - Publication in refereed journal

SN - 0255-5476

VL - 189-190

SP - 135

EP - 142

JO - Materials Science Forum

JF - Materials Science Forum

T2 - 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance

Y2 - 1 November 1993 through 5 November 1993

ER -