TY - GEN
T1 - HOT JET ETCHING THROUGH STENCIL MASKS.
AU - Geis, M. W.
AU - Pang, S. W.
AU - Efremow, N. N.
PY - 1987
Y1 - 1987
N2 - This article contains a description of hot jet etching through stencil masks. The dry etching technique does not damage the stencil mask, but anisotropically etches GaAs at rates as high as 10 mu m min** minus **1. Resolution less than 50 nm has been demonstrated. At present the etched surfaces are rough, but improvement of the etching technique may result in smooth surfaces.
AB - This article contains a description of hot jet etching through stencil masks. The dry etching technique does not damage the stencil mask, but anisotropically etches GaAs at rates as high as 10 mu m min** minus **1. Resolution less than 50 nm has been demonstrated. At present the etched surfaces are rough, but improvement of the etching technique may result in smooth surfaces.
UR - https://www.scopus.com/pages/publications/0023586518
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0023586518&origin=recordpage
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 931837421
VL - 76
SP - 143
EP - 145
BT - Materials Research Society Symposia Proceedings
PB - Materials Research Soc
ER -