Hot electron-induced MOS transconductance degradation

K. L. Yip; H. Wong; Y. C. Cheng

doi:10.1109/HKEDM.1995.520635

Hot electron-induced MOS transconductance degradation

K. L. Yip
, H. Wong
, Y. C. Cheng

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

6 Citations (Scopus)

Abstract

This work studies both the temperature and bias dependent transconductance degradation due to hot electron stressing in n-channel MOS transistors. Thermal oxide (OX), nitrided oxide (NOX), and nitrogen-annealed nitrided oxide (NNOX) are used as the device gate dielectrics. Results show that NOX device has the smallest transconductance degradation (20%) at 200 K because of the large amount of electrons being captured by the shallow traps and large Fuchs parameter for coulomb scattering. We also found that the temperature dependence and the hot-electron fluence effect of the transconductance degradation can be correlated with the hot electron-induced threshold-voltage shift. However, for electric field dependence, it is governed by the scattering parameters as well.

Original language	English
Title of host publication	Proceedings 1995 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	10-14
ISBN (Print)	0-7803-2919-8
DOIs	https://doi.org/10.1109/HKEDM.1995.520635
Publication status	Published - Jul 1995
Event	1995 IEEE Hong Kong Electron Devices Meeting - The University of Hong Kong, Hong Kong, China Duration: 1 Jul 1995 → 1 Jul 1995

Conference

Conference	1995 IEEE Hong Kong Electron Devices Meeting
Place	China
City	Hong Kong
Period	1/07/95 → 1/07/95

Access Output

10.1109/HKEDM.1995.520635

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{080bf4a7ed2145768de05028e2df075b,

title = "Hot electron-induced MOS transconductance degradation",

abstract = "This work studies both the temperature and bias dependent transconductance degradation due to hot electron stressing in n-channel MOS transistors. Thermal oxide (OX), nitrided oxide (NOX), and nitrogen-annealed nitrided oxide (NNOX) are used as the device gate dielectrics. Results show that NOX device has the smallest transconductance degradation (20\%) at 200 K because of the large amount of electrons being captured by the shallow traps and large Fuchs parameter for coulomb scattering. We also found that the temperature dependence and the hot-electron fluence effect of the transconductance degradation can be correlated with the hot electron-induced threshold-voltage shift. However, for electric field dependence, it is governed by the scattering parameters as well.",

author = "Yip, \{K. L.\} and H. Wong and Cheng, \{Y. C.\}",

year = "1995",

month = jul,

doi = "10.1109/HKEDM.1995.520635",

language = "English",

isbn = "0-7803-2919-8",

pages = "10--14",

booktitle = "Proceedings 1995 IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "1995 IEEE Hong Kong Electron Devices Meeting ; Conference date: 01-07-1995 Through 01-07-1995",

}

TY - GEN

T1 - Hot electron-induced MOS transconductance degradation

AU - Yip, K. L.

AU - Wong, H.

AU - Cheng, Y. C.

PY - 1995/7

Y1 - 1995/7

N2 - This work studies both the temperature and bias dependent transconductance degradation due to hot electron stressing in n-channel MOS transistors. Thermal oxide (OX), nitrided oxide (NOX), and nitrogen-annealed nitrided oxide (NNOX) are used as the device gate dielectrics. Results show that NOX device has the smallest transconductance degradation (20%) at 200 K because of the large amount of electrons being captured by the shallow traps and large Fuchs parameter for coulomb scattering. We also found that the temperature dependence and the hot-electron fluence effect of the transconductance degradation can be correlated with the hot electron-induced threshold-voltage shift. However, for electric field dependence, it is governed by the scattering parameters as well.

AB - This work studies both the temperature and bias dependent transconductance degradation due to hot electron stressing in n-channel MOS transistors. Thermal oxide (OX), nitrided oxide (NOX), and nitrogen-annealed nitrided oxide (NNOX) are used as the device gate dielectrics. Results show that NOX device has the smallest transconductance degradation (20%) at 200 K because of the large amount of electrons being captured by the shallow traps and large Fuchs parameter for coulomb scattering. We also found that the temperature dependence and the hot-electron fluence effect of the transconductance degradation can be correlated with the hot electron-induced threshold-voltage shift. However, for electric field dependence, it is governed by the scattering parameters as well.

UR - https://www.scopus.com/pages/publications/0029539881

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0029539881&origin=recordpage

U2 - 10.1109/HKEDM.1995.520635

DO - 10.1109/HKEDM.1995.520635

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-2919-8

SP - 10

EP - 14

BT - Proceedings 1995 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 1995 IEEE Hong Kong Electron Devices Meeting

Y2 - 1 July 1995 through 1 July 1995

ER -

Hot electron-induced MOS transconductance degradation

Abstract

Conference

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this