Homogeneous nucleation of epitaxial CoSi2 and NiSi in Si nanowires

Yi-Chia Chou; Wen-Wei Wu; Lih-Juann Chen; King-Ning Tu

doi:10.1021/nl900779j

Homogeneous nucleation of epitaxial CoSi₂ and NiSi in Si nanowires

Yi-Chia Chou^*, Wen-Wei Wu^*, Lih-Juann Chen, King-Ning Tu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

68 Citations (Scopus)

Abstract

Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi₂ and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation. © 2009 American Chemical Society.

Original language	English
Pages (from-to)	2337-2342
Journal	Nano Letters
Volume	9
Issue number	6
Online published	10 Jun 2009
DOIs	https://doi.org/10.1021/nl900779j
Publication status	Published - 10 Jun 2009
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Homogeneous nucleation of epitaxial CoSi2 and NiSi in Si nanowires",

abstract = "Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi2 and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation. {\textcopyright} 2009 American Chemical Society.",

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T1 - Homogeneous nucleation of epitaxial CoSi2 and NiSi in Si nanowires

AU - Chou, Yi-Chia

AU - Wu, Wen-Wei

AU - Chen, Lih-Juann

AU - Tu, King-Ning

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2009/6/10

Y1 - 2009/6/10

N2 - Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi2 and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation. © 2009 American Chemical Society.

AB - Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi2 and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation. © 2009 American Chemical Society.

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