High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)75-80
Journal / PublicationJournal of Crystal Growth
Volume443
Publication statusPublished - 1 Jun 2016
Externally publishedYes

Abstract

Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5 K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications.

Research Area(s)

  • A1. Low dimensional structures, A2. Growth from vapor, A2. High-pressure melt growth, B2. Semiconducting materials

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