Highly stretchable organic electrochemical transistors with strain-resistant performance

Jianhua Chen; Wei Huang; Ding Zheng; Zhaoqian Xie; Xinming Zhuang; Dan Zhao; Yao Chen; Ning Su; Hongming Chen; Robert M. Pankow; Zhan Gao; Junsheng Yu; Xugang Guo; Yuhua Cheng; Joseph Strzalka; Xinge Yu; Tobin J. Marks; Antonio Facchetti

doi:10.1038/s41563-022-01239-9

Highly stretchable organic electrochemical transistors with strain-resistant performance

Jianhua Chen, Wei Huang^*, Ding Zheng^*, Zhaoqian Xie^*, Xinming Zhuang, Dan Zhao, Yao Chen, Ning Su, Hongming Chen, Robert M. Pankow, Zhan Gao, Junsheng Yu, Xugang Guo, Yuhua Cheng, Joseph Strzalka, Xinge Yu^*, Tobin J. Marks^*, Antonio Facchetti^*

^*Corresponding author for this work

Department of Biomedical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

210 Citations (Scopus)

Abstract

Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30–140% tensional strain, limited only by metal contact fatigue. The prestretched honeycomb semiconductor channel of donor–acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10⁴ stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness.

Original language	English
Pages (from-to)	564-571
Journal	Nature Materials
Volume	21
Issue number	5
Online published	2 May 2022
DOIs	https://doi.org/10.1038/s41563-022-01239-9
Publication status	Published - May 2022

Funding

We thank Air Force Office of Scientific Research (AFOSR) (FA9550-18-1-0320), the Northwestern University Materials Research Science and Engineering Center (NU-MRSEC) (NSF DMR-1720139;) and Flexterra Corporation for support of this research. This work made use of the J. B. Cohen X-Ray Diffraction Facility; the Electron Probe Instrumentation Center (EPIC) facility, Keck-II facility, the Scanned Probe Imaging and Development (SPID) facility and Northwestern University Micro/Nano Fabrication Facility (NUFAB) of the Northwestern University’s Atomic and Nanoscale Characterization Experimental Center (NUANCE) at Northwestern University, which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC programme (NSF DMR-1121262); the International Institute for Nanotechnology; the Keck Foundation; and the State of Illinois, through the International Institute for Nanotechnology. Use of the Advanced Photon Source (beamline 8-ID-E), an Office of Science User Facility operated for the US Department of Energy Office of Science by Argonne National Laboratory, was supported by the US Department of Energy under contract DE-AC02-06CH11357. We also acknowledge the support from the National Natural Science Foundation of China (grant nos 61804073, 12072057, U1830207), Dalian Outstanding Young Talents in Science and Technology (grant no. 2021RJ06), LiaoNing Revitalization Talents Program (grant no. XLYC2007196), the Fundamental Research Funds for the Central Universities (grant no. DUT20RC(3)032), City University of Hong Kong (grants nos 9610423, 9667199), the Research Grants Council of the Hong Kong Special Administrative Region (grant no. 21210820), the Intelligence Community Postdoctoral Research Fellowship Program and Guangdong Provincial Key Laboratory Program (2021B1212040001) from the Department of Science and Technology of Guangdong Province.

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author = "Jianhua Chen and Wei Huang and Ding Zheng and Zhaoqian Xie and Xinming Zhuang and Dan Zhao and Yao Chen and Ning Su and Hongming Chen and Pankow, {Robert M.} and Zhan Gao and Junsheng Yu and Xugang Guo and Yuhua Cheng and Joseph Strzalka and Xinge Yu and Marks, {Tobin J.} and Antonio Facchetti",

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AU - Su, Ning

AU - Chen, Hongming

AU - Pankow, Robert M.

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AU - Yu, Junsheng

AU - Guo, Xugang

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AU - Marks, Tobin J.

AU - Facchetti, Antonio

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AB - Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30–140% tensional strain, limited only by metal contact fatigue. The prestretched honeycomb semiconductor channel of donor–acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 104 stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness.

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Highly stretchable organic electrochemical transistors with strain-resistant performance

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ECS: Skin-Integrated Sensing and Haptic Feedback Electronics for Health Monitoring and Sudden Illnesses Early Warning

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Highly stretchable organic electrochemical transistors with strain-resistant performance

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ECS: Skin-Integrated Sensing and Haptic Feedback Electronics for Health Monitoring and Sudden Illnesses Early Warning

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