Highly Stable Chemical N-doping of Graphene Nanomesh FET

Haider Al-Mumen; Lixin Dong; Wen Li

doi:10.1109/NEMS.2014.6908762

Highly Stable Chemical N-doping of Graphene Nanomesh FET

Haider Al-Mumen^*
, Lixin Dong
, Wen Li

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.

Original language	English
Title of host publication	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
Publisher	IEEE
Pages	72-76
ISBN (Electronic)	9781479947263
ISBN (Print)	9781479947270
DOIs	https://doi.org/10.1109/NEMS.2014.6908762
Publication status	Published - Apr 2014
Externally published	Yes
Event	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2014) - Waikiki Beach, United States Duration: 13 Apr 2014 → 16 Apr 2014 https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6908743 (Link to programme)

Conference

Conference	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2014)
Abbreviated title	IEEE-NEMS 2014
Place	United States
City	Waikiki Beach
Period	13/04/14 → 16/04/14
Internet address	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6908743 (Link to programme)

Research Keywords

graphene
transistor
nanomesh
doping

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10.1109/NEMS.2014.6908762

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@inproceedings{1a3c2800b51047a1a19aed2856198238,

title = "Highly Stable Chemical N-doping of Graphene Nanomesh FET",

abstract = "N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.",

keywords = "graphene, transistor, nanomesh, doping",

author = "Haider Al-Mumen and Lixin Dong and Wen Li",

year = "2014",

month = apr,

doi = "10.1109/NEMS.2014.6908762",

language = "English",

isbn = "9781479947270",

pages = "72--76",

booktitle = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)",

publisher = "IEEE",

address = "United States",

note = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2014), IEEE-NEMS 2014 ; Conference date: 13-04-2014 Through 16-04-2014",

url = "https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=\&arnumber=6908743",

}

Al-Mumen, H, Dong, L & Li, W 2014, Highly Stable Chemical N-doping of Graphene Nanomesh FET. in 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)., 6908762, IEEE, pp. 72-76, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2014), Waikiki Beach, Hawaii, United States, 13/04/14. https://doi.org/10.1109/NEMS.2014.6908762

Highly Stable Chemical N-doping of Graphene Nanomesh FET. / Al-Mumen, Haider; Dong, Lixin; Li, Wen.
9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE, 2014. p. 72-76 6908762.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Highly Stable Chemical N-doping of Graphene Nanomesh FET

AU - Al-Mumen, Haider

AU - Dong, Lixin

AU - Li, Wen

PY - 2014/4

Y1 - 2014/4

N2 - N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.

AB - N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.

KW - graphene

KW - transistor

KW - nanomesh

KW - doping

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84908635036&origin=recordpage

U2 - 10.1109/NEMS.2014.6908762

DO - 10.1109/NEMS.2014.6908762

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781479947270

SP - 72

EP - 76

BT - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

PB - IEEE

T2 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2014)

Y2 - 13 April 2014 through 16 April 2014

ER -

Highly Stable Chemical N-doping of Graphene Nanomesh FET

Abstract

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Research Keywords

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