Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • W. L. Sarney
  • S. V. Novikov
  • D. Detert
  • R. Zhao
  • J. D. Denlinger
  • S. P. Svensson
  • O. D. Dubon
  • W. Walukiewicz
  • C. T. Foxon

Detail(s)

Original languageEnglish
Article number102104
Journal / PublicationApplied Physics Letters
Volume102
Issue number10
Publication statusPublished - 11 Mar 2013
Externally publishedYes

Abstract

We have grown N-rich, dilute Sb GaN1-xSbx alloys by low temperature molecular beam epitaxy. At low growth temperature of 4 at. . Despite the different microstructures found for GaN1-xSbx alloys with different composition, the absorption edge shifts continuously from 3.4 eV (GaN) to close to 1 eV for samples with Sb content >30 at.%. GaN 1-xSbx alloys with less than 5 at.% Sb show sufficient bandgap reduction (∼2 eV), making them suitable for photoelectrochemical applications. © 2013 American Institute of Physics.

Citation Format(s)

Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy. / Yu, K. M.; Sarney, W. L.; Novikov, S. V.; Detert, D.; Zhao, R.; Denlinger, J. D.; Svensson, S. P.; Dubon, O. D.; Walukiewicz, W.; Foxon, C. T.

In: Applied Physics Letters, Vol. 102, No. 10, 102104, 11.03.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review